Command cancellation channel for read—modify—write operation in a memory

ABSTRACT

Some of the embodiments of the present disclosure provide an apparatus comprising a command cancellation channel (CCC) including a plurality of stages, the CCC configured to receive a first memory address of a sequence of memory addresses and a corresponding first modification command, determine that at least a first stage of the plurality of stages includes the first memory address and a corresponding second modification command, and erase the first memory address or cancel the second modification command while shifting the first memory address and the second modification command from the first stage to a second stage. Other embodiments are also described and claimed.

CROSS REFERENCE TO RELATED APPLICATIONS

The present application claims priority to U.S. Patent Application No.61/049,561 filed May 1, 2008, entitled “Command CancellationChannel/Block,” the entire specification of which is hereby incorporatedby reference in its entirety for all purposes, except for thosesections, if any, that are inconsistent with this specification.

TECHNICAL FIELD

Embodiments of the present invention relate to read-modify-writeoperations in a memory, and more particularly, to a command cancellationchannel for read-modify-write operations in a memory.

BACKGROUND

In a read-modify-write (RMW) operation of a memory, data from a memoryaddress may be read, modified, and then written back to the address fromwhich the data was read. An RMW operation may be an example of an atomicoperation, e.g., in which the read, modify, and write operations areperformed sequentially, and in which one or more other processes may notknow about the changes being made by the RMW operation until the entireoperation is completed. The modification operation of a RMW operationmay modify data read from a memory address in a number of ways. Forexample, in a fetch and add operation, data from the memory address maybe read, a given value may be added to the data (e.g., through a 1'scomplement addition, a 2's complement addition, or the like), and themodified data may be written back to the memory address. Numerous othertypes of RMW operations may also be possible.

In various applications, it may be desirable to perform two consecutiveRMW operations on a same memory address. For example, a first RMWoperation may commence after completion of a previous (e.g., second) RMWcommand. However, there may be instances where a command for the firstRMW operation is received before completion of the previous (e.g.,second) RMW operation. It may not always be possible to delay first RMWoperation so that the first RMW operation starts after completion of thesecond RMW operation. In other instances, commands for the first andsecond RMW operations may be received substantially at same time (e.g.,during same clock periods). However, partial overlapping of two RMWoperations may result in failure of at least one of the RMW operations.

SUMMARY

In an embodiment, the present disclosure provides an apparatus and amethod for command cancellation channel for read-modify-write operationin a memory. More specifically, there is provided, in accordance with anembodiment of the present invention, an apparatus comprising a commandcancellation channel (CCC) including a plurality of stages, the CCCconfigured to receive a sequence of memory read-modify-write (RMW)commands, wherein individual RMW commands include a modification commandand a memory address on which the corresponding modification command isto be applied, and a RMW module operatively coupled to the CCC. In anembodiment, the CCC may be further configured to receive a first RMWcommand of the sequence of RMW commands, the first RMW command includinga first memory address and a first modification command, determine thata first stage of the plurality of stages includes a second RMW commandthat includes the first memory address and a corresponding secondmodification command, and cancel the second RMW command based at leastin part on said determining.

There is also provided, in accordance with an embodiment of the presentinvention, a method for operating a CCC comprising a plurality ofstages, the method comprising receiving, by the CCC, a sequence ofmemory read-modify-write (RMW) commands, wherein individual RMW commandsinclude a modification command and a memory address on which thecorresponding modification command is to be applied, wherein thesequence of RMW commands include at least a first RMW command, andwherein the first RMW command includes a first memory address and acorresponding first modification command, determining, in response toreceiving the first RMW command, that at least a first stage of theplurality of stages includes a second RMW command that includes thefirst memory address and a corresponding second modification command,and canceling the second RMW command based at least in part on saiddetermining.

There is also provided, in accordance with an embodiment of the presentinvention, an apparatus comprising a CCC including a first plurality ofstages and a second plurality of stages, and a RMW module operativelycoupled to the CCC, wherein the CCC is configured to receive a firstsequence of RMW commands, wherein individual RMW commands include amodification command and a memory address on which the correspondingmodification command is to be applied, and wherein the first sequence ofRMW commands include a first RMW command comprising a first memoryaddress and a corresponding first modification command, determine, inresponse to receiving the first RMW command, that at least a first stageof the first or second plurality of stages includes a second RMW commandcomprising the first memory address and a corresponding secondmodification command, and cancel the second RMW command.

There is also provided, in accordance with an embodiment of the presentinvention, a method for operating a CCC comprising a first plurality ofstages and a second plurality of stages, the method comprising receivinga first sequence of memory addresses and a corresponding first sequenceof modification commands, including at least a first memory address anda corresponding first modification command, receiving a second sequenceof memory addresses and a corresponding second sequence of modificationcommands, shifting, during each clock period, the first sequence ofmemory addresses and the corresponding first sequence of modificationcommands through individual stages of the first plurality of stages,shifting, during each clock period, the second sequence of memoryaddresses and the corresponding second sequence of modification commandsthrough individual stages of the second plurality of stages,determining, in response to receiving the first memory address and thecorresponding first modification command, that at least a first stage ofthe first or second plurality of stages includes the first memoryaddress and a corresponding second modification command, and erasing thefirst memory address or canceling the second modification command whileshifting the first memory address and the second modification commandfrom the first stage to a second stage of the first or second pluralityof stages or to a RMW module operatively coupled to the CCC.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the present invention will be readily understood by thefollowing detailed description in conjunction with the accompanyingdrawings. To facilitate this description, like reference numeralsdesignate like structural elements. Embodiments of the invention areillustrated by way of example and not by way of limitation in thefigures of the accompanying drawings.

FIG. 1 a illustrates an example of a timing diagram of two RMWoperations, wherein a RMW operation for a memory address is commencedafter completion of a previous RMW operation on the same memory address;

FIG. 1 b illustrates an example of a timing diagram of two RMWoperations, where a RMW operation is commenced before completion of aprevious RMW operation;

FIG. 1 c illustrates an example of a timing diagram in which two RMWoperations are combined and executed as a single RMW operation, inaccordance with an embodiment of the present invention;

FIG. 2 a schematically illustrates an example of a RMW system thatincludes a command cancellation channel (CCC), in accordance with anembodiment of the present invention;

FIG. 2 b schematically illustrates another example of a RMW system thatincludes a CCC, in accordance with an embodiment of the presentinvention;

FIG. 2 c illustrates an example of an operation of the CCC of FIGS. 2 aand 2 b, in accordance with an embodiment of the present invention;

FIG. 2 d illustrates an example of a method for operating the CCC ofFIGS. 2 a-2 c, in accordance with an embodiment of the presentinvention;

FIG. 2 e illustrates another example of a method for operating the CCCof FIGS. 2 a-2 c, in accordance with an embodiment of the presentinvention;

FIG. 3 a schematically illustrates an example of a RMW system thatincludes a CCC operatively coupled to a plurality of memory pipes, inaccordance with an embodiment of the present invention;

FIG. 3 b schematically illustrates another example of a RMW system thatincludes a CCC operatively coupled to a plurality of memory pipes, inaccordance with an embodiment of the present invention;

FIG. 3 c illustrates example of an operation of the CCC of FIGS. 3 a and3 b, in accordance with an embodiment of the present invention;

FIG. 3 d illustrates another example of an operation of the CCC of FIGS.3 a and 3 b, in accordance with an embodiment of the present invention;

FIG. 4 illustrates an example of a method 400 for operating the CCC ofFIGS. 3 a-3 d, in accordance with an embodiment of the presentinvention; and

FIG. 5 is a simplified block diagram of a system in which embodiments ofthe present invention may be implemented.

DETAILED DESCRIPTION OF EMBODIMENTS OF THE INVENTION

FIG. 1 a illustrates an example of a timing diagram 100 of two RMWoperations, wherein a RMW operation for a memory address (e.g., memoryaddress Addr 0) is commenced after completion of a previous RMWoperation on the same memory address (e.g., Addr 0). Prior to the startof the RMW operations, data Dout may be stored in the memory addressAddr 0. It may be desirable to modify the value of the data stored inAddr 0 from Dout to DoutA (e.g., by adding a value A to Dout) during thefirst RMW operation, and further modify the value of the data stored inAddr 0 from DoutA to DoutAB (e.g., by adding a value B to DoutA) duringthe second RMW operation. A RMW module may be configured to control theRMW operations.

Referring again to FIG. 1, during a first clock period, memory addressAddr 0 may be received by the RMW module. During a second clock period,data Dout may be read from the address Addr 0. During a third clockperiod, the data Dout may be modified to DoutA (e.g., by adding value Ato data Dout), as illustrated by arrow 108. During a fourth clockperiod, the modified data DoutA may be written back to the address Addr0.

The second RMW operation on the same memory address Addr 0 may start ata fifth clock period (e.g., after completion of the first RMWoperation), during which the RMW module may receive the memory addressAddr 0. During a sixth clock period, data DoutA (that was written to thememory address during the first RMW operation) may be read from thememory address Addr 0. The data read from the memory may be modified toDoutAB (e.g., by adding a value B to the data DoutA) during the seventhclock period (illustrated by arrow 112), and written back to the memoryaddress Addr 0 during the eighth clock period.

However, there may be situations where a RMW operation for a particularmemory address may start before completion of a previous RMW operationfor that memory address. FIG. 1 b illustrates an example of a timingdiagram 130 of two RMW operations, where a RMW operation is commencedbefore completion of a previous RMW operation. Similar to FIG. 1 a, inthe RMW operations of FIG. 1 b, it may be desirable to modify the valueof the data stored in Addr 0 from Dout to DoutA during a first RMWoperation, and further modify the value of the data stored in Addr 0from DoutA to DoutAB during a second RMW operation.

Referring again to FIG. 1 b, during a first clock period, memory addressAddr 0 may be received by the RMW module for the first RMW operation.During a second clock period, data Dout may be read from the addressAddr 0 as a part of the first RMW operation. Additionally, during thesecond clock period, memory address Addr 0 may be received by the RMWmodule for the second RMW operation. Thus, the second RMW operation maystart from the second clock period. During a third clock period, as apart of the first RMW operation, the data Dout (previously read from thememory address Addr 0) may be modified to DoutA. Also, during the thirdclock period, as a part of the second RMW operation, data Dout may beread from the memory address Addr 0. During the fourth clock period, asa part of the first RMW operation, the modified data DoutA may bewritten back to the address Addr 0. At the same time, as a part of thesecond RMW operation, the data Dout (previously read from the memoryaddress Addr 0) may be modified to DoutB. That is, instead of the secondmodification operation being carried out on DoutA, the secondmodification operation may be carried out on Dout, resulting in amodified value of DoutB. During the fifth clock period, as a part of thesecond RMW operation, the modified data DoutB may be written back to theaddress Addr 0 (e.g., by overwriting the data DoutA).

Thus, because of partial overlapping of the two consecutive RMWoperations, the final data written in the memory address Addr 0 may beDoutB, instead of the intended data of DoutAB. That is, full or partialoverlapping of two consecutive RMW operations on the same memory addressmay create error condition for at least one of the RMW operations.Accordingly, while using conventional RMW methods, a RMW operation for amemory address may start only after completion (e.g., writing back) of aprevious RMW operation on the same memory address. However, this mayresult in reduction of a bandwidth of memory access and/or may result indelay in the RMW operations.

Moreover, partial overlapping of the two consecutive RMW operations maycreate other error conditions. For example, if the 2^(nd) RMW operationin FIG. 1 b starts at the third clock period (instead of the secondclock period, as illustrated in FIG. 1 b), data may be read from Addr 0during the fourth clock period (as a part of the second RMW operation)and may be written to Addr 0 also during the fourth clock period (as apart of the first RMW operation). In some types of memories, suchsimultaneous read and write during the same clock period may not bepermitted; while in some other types of memories, such simultaneous readand write may create error conditions.

Additionally, a memory may be accessed through a plurality of interfacesor pipes. That is, a plurality of memory pipes may share access to amemory, as is well known to those skilled in the art. For example, fourmemory pipes may simultaneously access (e.g., read and/or write data)one or more addresses in a memory. While a first memory pipe may accessa first memory address in a memory block, a second pipe maysimultaneously access a second memory address in the memory block.Additionally, the first memory pipe may perform a first RMW operation onthe first memory address, and the second memory pipe may perform asecond RMW operation on the same first memory address. However, in casethe first and the second RMW operations overlap at least partially, oneor more error conditions (e.g., similar to those discussed with respectto FIG. 1 b) may occur in at least one of the two RMW operations.

FIG. 1 c illustrates an example of a timing diagram 160 in which two RMWoperations are combined and executed as a single RMW operation, inaccordance with an embodiment of the present invention. Similar to FIG.1 b, in the RMW operations of FIG. 1 c, it may be desirable to modifythe value of the data stored in Addr 0 from Dout to DoutA (e.g, byadding a value A to Dout) during a first RMW operation using a first RMWcommand, and further modify the value of the data stored in Addr 0 fromDoutA to DoutAB (e.g., by adding a value B to DoutA) during a second RMWoperation using a second RMW command. In an embodiment, timing ofreceiving the first and second RAM commands may be such that the two RMWoperations are to overlap at least partially. To avoid the erroneousoperations due to overlapping of two RAM operations (as discussed withrespect to FIG. 1 b), in one embodiment, the first RMW command and thesecond RMW command for the first and second RAM operations,respectively, may be combined to generate a third RMW command for athird RAM operation. For example, in one embodiment, the third RMWcommand may add a value (A+B) to Dout during the third RMW operation,and the first and second RMW operations may be cancelled. As illustratedin FIG. 1 c, none of the first and second RMW operations may be carriedout to memory address Addr 0. Instead, a third RMW operation may becarried out, in which Dout may be directly modified (e.g., by addingvalue (A+B)) to generate and store DoutAB in memory address Addr 0, aswill be discussed in more details herein later.

In an embodiment, the first RMW operation may be cancelled, and thesecond RMW operation may be modified to generate the third RMWoperation. In another embodiment, the second RMW operation may becancelled, and the first RMW operation may be modified to generate thethird RMW operation, as will be discussed in more details herein later.

FIG. 2 a schematically illustrates an example of a RMW system 200 thatincludes a command cancellation channel (CCC) 218, in accordance with anembodiment of the present invention. In an embodiment, the RMW system200 may include a memory 204, and a RMW module 210 operatively coupledto the memory 204. The memory 204 may be any appropriate type of memory,e.g., a random access memory (RAM). The RMW module 210 may be configuredto perform one or more RMW operations on one or more addresses in thememory 204. The RMW module 210 may also be operatively coupled to theCCC 218.

The CCC 218 may include a plurality of stages (e.g., stage 0, stage 1, .. . , stage 3). In an embodiment, the individual stages may be comprisedof shift registers, buffers, a storage element, a memory, or the like.Although four stages of the CCC 218 are illustrated in FIG. 2 a, adifferent number of stages (e.g., three, five, etc.) may also beincluded in the CCC 218. In an embodiment, a minimum number of stagesincluded in the CCC 218 may be based at least in part on a maximumnumber of clock periods (e.g., four clock periods) required to completea RMW operation by the RMW module 210.

In an embodiment, the CCC 218 may receive a sequence of RMW commands(including, for example, a corresponding sequence of memory addressesand a corresponding sequence of modification commands) intended for acorresponding sequence of RMW operations on the memory 204. For example,the CCC 218 may receive a first RMW command, including a firstmodification command and a first memory address on which the firstmodification command may be applied during a first RMW operation. TheCCC 218 may be configured to shift, during each clock period, thereceived sequence of RMW commands (e.g., the sequence of memoryaddresses and the corresponding sequence of modification commands)through the plurality of stages stage 0, stage 1, . . . , stage 3.

For example, during a first clock period, the CCC 218 may receive thefirst RMW command (including the first memory address and thecorresponding first modification command) for a first RMW operation.During a second clock period, the CCC 218 may shift the first RMWcommand to stage 0. During the second clock period, the CCC 218 may alsoreceive a second RMW command, including a second memory address and acorresponding second modification command, for a second RMW operation.During a third clock period, the CCC 218 may shift the first RMW commandfrom stage 0 to stage 1, may shift the second RMW command to stage 0,and may receive a third RMW command (including a third memory addressand a corresponding third modification command) for a third RMWoperation. The process may continue, and during each clock period, thesequence of RMW commands may continue shifting (e.g., shifting fromstage 0 to stage 1, . . . , from stage 2 to stage 3) through the stages(e.g., from lower stage on the left in FIG. 2 a to the next higher stageon the right), and outputting the RMW commands (including the associatedmemory address and modification command) of the last (or rightmost)stage 3 to the RMW module 210.

In an embodiment, the CCC 218 may also include a cancellation logic 420configured to receive the incoming sequence of RMW commands, andoperatively coupled to the individual stages of the CCC 218. In anembodiment, the cancellation logic 420 may be configured to modifyand/or cancel one or more RMW commands received by the CCC 218 and/orstored in one or more stages of the CCC 218, as will be discussed inmore detail herein later.

FIG. 2 b schematically illustrates another example of a RMW system 200 bthat includes a CCC 218 b, in accordance with an embodiment of thepresent invention. One or more components of system 200 b of FIG. 2 bmay be at least partially similar to the corresponding components ofsystem 200 FIG. 2 a. However, cancellation logic 420 b of system 200 bmay be operatively coupled to other components of the system in adifferent manner as compared to the cancellation logic 420 of system200, as illustrated in FIG. 2 b. In an embodiment, the cancellationlogic 420 b may receive the incoming RMW commands, and may shift thereceived RMW commands to stage 0.

FIG. 2 c illustrates an example of an operation of the CCC of FIGS. 2 aand 2 b, in accordance with an embodiment of the present invention. Morespecifically, FIG. 2 c illustrates the status of various stages (e.g., amemory address and a modification command of an associated RMW commandstored in individual stages) of the CCC 218 for two consecutive clockperiods (identified as current clock period and next clock period inFIG. 2 c). For illustrative and clarity purposes, the cancellation logic420 of FIG. 2 a (or the cancellation logic 420 b of FIG. 2 b) is notillustrated in the CCC 218 of FIG. 2 c.

In FIG. 2 c, individual modification commands of respective RMW commandsmay be assumed to be an addition command, and individual modificationcommands may include a value that may be added to data of correspondingmemory address during a corresponding RMW operation. For example, theCCC 218 may receive a RMW command, which may include an address (e.g.,Addr 3) of the memory 204, and a corresponding data (e.g., Data −8). TheCCC 218 may transmit the RMW command to RMW module 210. In response, theRMW module 210 may perform a RMW operation on data stored in memoryaddress Addr 3, in which the data may be modified through addition of −8to the data stored in Addr 3. Although FIG. 2 c illustrates modificationcommands associated with addition, any other modification command mayalso be used in various other embodiments.

As previously discussed, FIG. 2 c illustrates the status of variousstages of the CCC 218 for a current clock period and a next clockperiod. During the current clock period, individual stages of the CCC218 may include a RMW command (comprising a memory address and acorresponding modification command) that was received by the CCC 218during one or more previous clock periods. For example, during thecurrent clock period, stage 0 may store a RMW command comprising anaddress Addr 17 and Data +5 that is to be added (through additioncommand) to the data stored in the address Addr 17 of memory 204. TheRMW command, including address Addr 17 and Data +5, in stage 0 may havebeen received by the CCC 218 during one clock period earlier than thecurrent clock period. Similarly, stage 1 may include Addr 3 and Data −8,which may have been received by the CCC 218 two clock periods earlierthan the current clock period. In an embodiment, stage 2 may not includeany RMW command (e.g., include a “no operation” or NOP address and/or anull or Data 0 modification command). This may happen, for example, ifthe CCC 218 did not receive any RMW command during a clock period thatmay be three clock periods earlier to the current clock period. Stage 3may include address Addr 6 and Data −1.

Additionally, during the current clock period, the CCC 218 may receivean incoming RMW command comprising address Addr 3 and Data +5. In anembodiment, during the current clock period, the Addr 3 of the incomingRMW command may be same as the address of the RMW command stored instage 1.

During the next clock period, the RMW command (e.g., Addr 6, Data −1)stored in the last stage (e.g., stage 3) may shift (illustrated by arrow240) to the RMW module 210 for being executed by the RMW module 210 onmemory Addr 6 of memory 204. Additionally, during the next clock period,the RMW commands stored in stages 0 and 2 may shift by one stage to theright (e.g., to stages 1 and 3, respectively, and illustrated by arrows246 and 242, respectively).

However, during the current clock period, the address Addr 3 of theincoming RMW command may same as the address of the RMW command instage 1. Accordingly, if the RMW command of stage 1 and the incoming RMWcommand are shifted through all the stages and to the RMW module 210,then within a few clock periods, the RMW 210 module may start executingthe two RMW commands on the same memory address, wherein execution ofthe two RMW commands may at least partially overlap. This may result inerroneous operation, as discussed with respect to FIG. 2.

To avoid a possibility of erroneous operation (e.g., as discussed withrespect to FIG. 1 b), in an embodiment, during the next clock period,instead of shifting the RMW command stored in stage 1 to stage 2, theRMW command may be cancelled by, for example, shifting a nullified orcancelled address (e.g., Addr NOP) to stage 2 (illustrated by dottedarrow 444). Although not illustrated in FIG. 2 c, in various otherembodiments, the address Addr 3 and Data 0 (e.g., no data or nomodification command) may be shifted to stage 2 during the next clockperiod. Put differently, the memory address and/or the modificationcommand of the RMW command in stage 1 may be erased, cancelled and/ornullified while shifting to stage 2 during the next clock period.

In an embodiment, to compensate for canceling the RMW command stored instage 1, the incoming RMW command of the current clock period may bemodified such that the associated modification command (e.g., Data +5)may be combined with the modification command (e.g., Data −8) in stage1, and the resultant combined (or modified) modification command (e.g.,(Data −8)+(Data 5)=(Data −3)) may be shifted to stage 0 during the nextclock period (illustrated by dotted arrow 248). Accordingly, in the nextclock period, there may be only one stage (e.g., stage 0) that mayinclude a RMW command that includes memory address Addr 3, therebyavoiding changes of partially overlapping RMW operations on memoryaddress Addr 3 of memory 204.

In an embodiment, although not illustrated in FIG. 2 c, the modificationand/or cancellation of memory address and/or modification commands inthe CCC 218 may be controlled by the cancellation logic 420 of FIG. 2 a(or cancellation logic 420 b of FIG. 2 b).

In FIG. 2 c, the RMW command of stage 1 (during current clock period) iscancelled while shifting the same to stage 2, and the incoming RMWcommand (during current clock period) is modified accordingly. Althoughnot illustrated in FIG. 2 c, in another embodiment, the incoming RMWcommand (during current clock period) may be cancelled while shiftingthe same to stage 0 during the next clock period; and to compensate thecancelled command, the RMW command of stage 1 (during current clockperiod) may be modified accordingly while shifting the same to stage 2during the next clock period. Accordingly, in this embodiment, duringthe next clock period, stage 0 may include (Addr NOP, Data +5), andstage 2 may include (Addr 3, Data −3).

FIG. 2 d illustrates an example of a method 250 for operating the CCC218 of FIGS. 2 a-2 c, in accordance with an embodiment of the presentinvention. In an embodiment, method 250 may include, at block 252,receiving, by the CCC 218, a sequence of RMW commands. Individual RMWcommands may include a modification command and a memory address onwhich the corresponding modification command may be applied. Thesequence of RMW commands may include at least a first RMW command (e.g.,the incoming RMW command during the current clock period in FIG. 2 c,with Addr 3 and data +5), and wherein the first RMW command may includea first memory addresses (Addr 3) and a corresponding first modificationcommand (Data +5). The CCC 218 may shift, during each clock period, thesequence of RMW commands through individual stages of the plurality ofstages (e.g., stages 0, . . . , 3) of the CCC 218.

In an embodiment, method 250 may further include, at block 254,determining, in response to receiving the first RMW command, that atleast a first stage (e.g., stage 1 with Addr 3 and Data −8 in FIG. 2 c)of the plurality of stages includes a second RMW command that includesthe first memory address (Addr 3) and a corresponding secondmodification command (Data −8). The method 250 may further include, atblock 256, canceling the second RMW command based at least in part onthe determining at block 254, and modifying the first RMW command bycombining the first modification command (e.g., Data +5) and the secondmodification command (e.g., Data −8) to generate a modified firstmodification command (e.g., with (Data +5)+(Data −8)=(Data −3)) for themodified first RMW command. As discussed with respect to FIG. 2 c, thecancellation of the second RMW command may take place while shifting thesecond RMW command from stage 1 to stage 2 during the next clock period.The modified first RMW command may be shifted to a second stage (e.g.,stage 0) of the plurality of stages during the next clock period.

FIG. 2 e illustrates another example of a method 270 for operating theCCC 218 of FIGS. 2 a-2 c, in accordance with an embodiment of thepresent invention. In an embodiment, method 270 may include, at block274, receiving, by the CCC 218, a sequence of memory addresses and acorresponding sequence of modification commands, including at least afirst memory address (e.g., Addr 3) and a corresponding firstmodification command (e.g., an addition command, with Data +5). Themethod 270 may further include, at block 276, shifting, during eachclock period, the sequence of memory addresses and the correspondingsequence of modification commands through individual stages of theplurality of stages (e.g., stage 0, . . . , stage 3).

The method 270 may further include, at block 278, determining, inresponse to receiving the first memory address and the correspondingfirst modification command during the current clock period, that atleast a first stage (e.g., stage 1 of FIG. 2 c) of the plurality ofstages includes the first memory address (e.g., Addr 3) and acorresponding second modification command (e.g., an addition, with Data−8). The method 270 may further include, at block 280, erasing the firstmemory address (e.g., Addr 3) and/or canceling the second modificationcommand (e.g., Data −8) while shifting the first memory address and thesecond modification command from the first stage (e.g., stage 1) to asecond stage (e.g., stage 2) or to the RMW 210 (e.g., in case the firststage of block 278 is stage 3) during the next clock period.

In an embodiment, the method 270 may further include, at block 282,generating a modified first modification command (e.g., (Data +5)+(Data−8)=(Data −3)) by combining the first modification command (e.g., Data+5) and the second modification command (e.g., Data −8), and shiftingthe first address (Addr 3) and the modified first modification command(e.g., Data −3) into a third stage (e.g., stage 0) of the plurality ofstages. In an embodiment, the operations at block 280 and 282 may occursubstantially simultaneously (e.g., during the same clock period (e.g.,during the next clock period)).

In an embodiment, the method 270 may further include, at block 284,shifting the first address (e.g., Addr 3) and the modified firstmodification command (e.g., Data −3), during each clock period, from thethird stage (e.g., stage 0) through one or more stages (e.g., stages 1,2, and 3) of the plurality of stages. The method 270 may furtherinclude, at block 286, outputting the first memory address and themodified first modification command to the RMW module 210. The method270 may further include, at block 288, performing a RMW operation by theRMW module 210 on the first memory address of the memory 204, based atleast in part on the first memory address and the modified firstmodification command received from stage 3 of CCC 218.

FIG. 3 a schematically illustrates an example of a RMW system 300 thatincludes a CCC 318 operatively coupled to a plurality of memory pipes,in accordance with an embodiment of the present invention. In anembodiment, the RMW system 300 may include a memory 304, and RMW modules310A and 310B operatively coupled to the memory 304. The CCC 318 may beoperatively coupled to a first memory pipe (first memory pipe) and asecond memory pipe (second memory pipe). The CCC 318 may include a firstplurality of stages (stage 0A, stage 1A, . . . , stage 3A) and a secondplurality of stages (stage 0B, stage 1B, . . . , stage 3B) for memorypipes 1 and 2, respectively. In an embodiment, the individual stages ofthe first and second plurality of stages may comprise of shiftregisters.

The CCC 318 may also include cancellation logic 320 operatively coupledto individual stages of the first and second plurality of stages, andconfigured to receive incoming data from the first and the second memorypipes. Although not illustrated in FIG. 3 a, in an embodiment, thecancellation logic may be operatively coupled between stage 0A andincoming data from first memory pipe and/or may be operatively coupledbetween stage 0B and incoming data from second memory pipe.

Although a single CCC 318 and a single cancellation logic 320 isillustrated in FIG. 3 a for both memory pipes, in an embodiment, twoseparate CCCs and/or two separate cancellation logic units may also beused for the corresponding two memory pipes. Although only two memorypipes and four stages for each memory pipes are illustrated in FIG. 3 a,in an embodiment, the inventive principles may be applicable to adifferent number of memory pipes and/or different number of stages. Inan embodiment, a minimum number of stages included in the first and/orsecond plurality of stages may be based at least in part on a maximumnumber of clock periods required to complete a RMW operation by the RMWmodules 310A and/or 310B on one or more memory addresses of memory 304.

The CCC 318 may be configured to receive a first sequence of RMWcommands, including a corresponding first sequence of memory addressesand a corresponding first sequence of modification commands, from thefirst memory pipe. For example, the first sequence of RMW commands fromthe first memory pipe may include a first RMW command, including a firstmodification command and a first memory address on which the firstmodification command may be applied during a first RMW operation. TheCCC 318 may also be configured to receive a second sequence of RMWcommands, including a corresponding second sequence of memory addressesand a corresponding second sequence of modification commands from thesecond memory pipe. The CCC 318 may be further configured to shift,during each clock period, the first sequence of RMW commands (includingthe corresponding first sequence of memory addresses and thecorresponding first sequence of modification commands) through theindividual stages of the first plurality of stages. The CCC 318 may befurther configured to shift, during each clock period, the secondsequence of RMW commands (including the corresponding second sequence ofmemory addresses and the corresponding second sequence of modificationcommands) through the individual stages of the second plurality ofstages.

In an embodiment, the CCC 318 (e.g., the cancellation logic 320) maymodify, cancel, and/or erase one or more RMW commands (e.g., modify,cancel, and/or erase associated memory addresses and/or modificationcommands) of the first and/or second sequence of RMW commands, as willbe discussed in detail herein later.

FIG. 3 b schematically illustrates another example of a RMW system 300 bthat includes a CCC 318 b operatively coupled to a plurality of memorypipes, in accordance with an embodiment of the present invention. One ormore components of system 300 b of FIG. 3 b may be at least partiallysimilar to the corresponding components of system 300 of FIG. 3 a.However, cancellation logic 420 b of system 200 b may be operativelycoupled to other components of the system in a different manner ascompared to the cancellation logic 420 of system 200, as illustrated inFIG. 2 b. For example, the cancellation logic 320 b may be operativelycoupled between stage 0A and incoming data from first memory pipe and/ormay be operatively coupled between stage 0B and incoming data fromsecond memory pipe. The cancellation logic 320 b may also be operativelycoupled to the individual stages of the first and second plurality ofstages (e.g., stage 0A, . . . , stage 3B), and may be configured tocontrol the shifting of RMW commands between individual stages. Thecancellation logic 320 b may selectively modify, erase and/or cancel oneor more RMW commands while shifting the same through individual stagesof the first and/or second plurality of stages.

FIG. 3 c illustrates example of an operation of the CCC of FIGS. 3 a and3 b, in accordance with an embodiment of the present invention. Morespecifically, FIG. 3 c illustrates the status of various stages (e.g.,the memory addresses and the modification commands of the correspondingRMW commands stored in individual stages) of the CCC 318 for twoconsecutive clock periods (identified as current clock period and nextclock period in FIG. 3 c). For illustrative and clarity purposes, thecancellation logic 320 of FIG. 3 a (or cancellation logic 320 b of FIG.3 b) is not illustrated in the CCC 318 of FIG. 3 c.

In FIG. 3 c, individual modification commands may be assumed to beaddition commands, and individual modification commands may include acorresponding value that is to be added to data of corresponding memoryaddress. For example, the CCC 318 may receive an address (e.g., Addr 3)and a corresponding data (e.g., Data −8), and transmit the same to RMWmodule 310A. In response, the RMW module 310A may perform a RMWoperation of data stored in memory address Addr 3, in which the data maybe modified through an addition of −8 to the data. Although FIG. 3 billustrates modification commands associated with addition only, anyother modification command may also be used in various otherembodiments.

Referring again to FIG. 3 c, during the current clock period, each stageof the first and second plurality of stages of the CCC 318 may include amemory address and a modification command (e.g., data for addition) ofan RMW command received during previous clock periods. For example,stage 0A may store address Addr 17 and Data +5, stage 1A may store Addr3 and Data −8, stage 2A may store Addr 6 and Data +1, stage 3A may storeAddr 14 and Data +2, stage 0B may store Addr NOP (e.g., no RMW command),stage 1B may store Addr 5 and Data +1, stage 2B may store Addr 2 andData +2, and stage 3B may store Addr 20 and Data +3,

Additionally, during the current clock period, the CCC 318 may receivean incoming RMW command with address Addr 2 and Data −7 from firstmemory pipe and receive an incoming RMW command with address Addr 4 andData +7 from second memory pipe. In an embodiment, the incoming RMWcommand from first memory pipe may include address Addr 2 that may besame as the address of the RMW command stored in stage 2B.

During the next clock period, the RMW commands (e.g., memory addressesand the corresponding modification commands) stored in one or morestages may shift to a next stage (or to one of the RMW modules 310A or310B), as illustrated by the solid arrows. For example, during the nextclock period, Addr 17 and Data +5 stored in stage 0A may shift to stage1A, Addr 3 and Data −8 stored in stage 1A may shift to stage 2A, Addr 6and Data +1 stored in stage 2A may shift to stage 3A, Addr 14 and Data+2 stored in stage 3A may shift to RMW 310A, Addr NOP stored in stage 0Bmay shift to stage 1B, Addr 5 and Data +1 stored in stage 1B may shiftto stage 2B, and Addr 20 and Data +3 stored in stage 3B may shift to RMW310B. Additionally, during the next clock period, the incoming RMWcommand (including address Addr 4 and Data +7) from second memory pipemay shift to stage 0B.

In an embodiment, the CCC 318 (e.g., the command cancellation logic 320)may determine that the address (e.g., Addr 2) of the incoming RMWcommand from the first memory pipe during the current clock period isthe same as the address of the RMW command stored in stage 2B. Based onthis determination, during the next clock period, the CCC 318 (e.g., thecommand cancellation logic 320) may cancel the RMW command stored instage 2B. For example, the CCC 318 may erase Addr 2 or cancel Data +2(e.g., by modifying to Data 0) of the RMW command while shifting thesame from stage 2B to stage 3B (illustrated by dotted arrow).Accordingly, in an embodiment, during the next cycle, stage 3B mayinclude an Addr NOP and Data x (wherein x may denote a “don't care”condition). In various other embodiments, during the next cycle, stage3B may include an Addr x (e.g., don't care, Addr 2, etc.), and the datain stage 3B may be modified to 0 (e.g., Data 0).

In an embodiment, based at least in part on determining that theincoming address Addr 2 from the first memory pipe during the currentclock period is same as the address stored in stage 2B, the CCC 318(e.g., the command cancellation logic 320) may modify the incoming RMWcommand (e.g., modify the associated modification command) whileshifting the same to stage 0A during the next clock period (illustratedby dotted arrow). For example, the command cancellation logic 320 maycombine the modification command (e.g., Data −7) of the incoming RMWcommand from the first memory pipe with the modification command of theRMW command stored in stage 2B (e.g., Data +2) to generate a modifiedmodification command of (Data −7)+(Data 2)=(Data −5). The commandcancellation logic 320 may shift the modified incoming RMW command(including the modified modification command) to stage 0A during thenext clock period.

In an embodiment, the cancellation of the RMW command stored in stage 2Bduring the current clock period and/or modification of the incoming RMWcommand from first memory pipe may ensure that the erroneous conditiondiscussed with respect to FIG. 1 b do not arise.

In an embodiment, the number of stages in the first and/or secondplurality of stages may be based at least in part on a maximum number ofclock periods required by the RMW module 310A and/or 310B to perform aRMW operation on one or more memory addresses of the memory 304. Forexample, as illustrated in FIG. 1 c, a RMW operation may take 4 clockperiods to complete. Accordingly, each of the first and second pluralityof stages of FIGS. 3 a-3 c may include at least 4 stages to avoiderroneous operating conditions discussed with respect to FIG. 1 b.

FIG. 3 d illustrates another example of an operation of the CCC of FIGS.3 a and 3 b, in accordance with an embodiment of the present invention.The operation illustrated in FIG. 3 d may be at least in part similar tothe operation illustrated in FIG. 3 c. However, unlike FIG. 3 c, in FIG.3 d an incoming RMW command from the second memory pipe during thecurrent cycle may include an RMW command comprising address Addr 2 andData +6.

In an embodiment, the command cancellation logic 320 may determine thatthe address (e.g., Addr 2) of the incoming RMW command from the firstmemory pipe during the current clock period is the same as the addressof the incoming RMW command from the second memory pipe, which is alsothe same as the address of the RMW command stored in stage 2B. Based onthis determination, during the next clock period, the commandcancellation logic 320 may cancel the RMW command in stage 2B whileshifting the same from stage 2B to stage 3B (illustrated by dottedarrow), as discussed with respect to FIG. 3 c. Additionally, based onthis determination, during the next clock period, the commandcancellation logic 320 may cancel the incoming RMW command from thesecond memory pipe while shifting the same to stage 0B (illustrated bydotted arrow).

Moreover, based on this determination, the command cancellation logic320 may modify the incoming RMW command (e.g., modify the associatedmodification command) from the first memory pipe while shifting the sameto stage 0A during the next clock period (illustrated by dotted arrow).For example, the command cancellation logic 320 may combine themodification command (e.g., Data −7) of the incoming RMW command fromthe second memory pipe with the incoming modification command (e.g.,Data +6) from the second memory pipe and the modification command storedin stage 2B (e.g., Data +2), and generate a modified modificationcommand of (Data −7)+(Data +6)+(Data 2)=(Data +1). The commandcancellation logic 320 may shift this modified modification command ofData +1 to stage 0A during the next clock period.

FIG. 4 illustrates an example of a method 400 for operating the CCC 318of FIGS. 3 a-3 d, in accordance with an embodiment of the presentinvention. In an embodiment, method 400 may include, at block 404receiving a first sequence of RMW command, including a correspondingfirst sequence of memory addresses and a corresponding first sequence ofmodification commands (e.g., from first memory pipe). The first sequenceof RMW command may include at least a RMW command comprising a firstmemory address (e.g., Addr 2) and a corresponding first modificationcommand (e.g., Data −7), received during the current clock period. Themethod 400 may further include, at block 404, receiving a secondsequence of memory addresses and a corresponding second sequence ofmodification commands (e.g., from second memory pipe) for acorresponding second sequence of RMW commands.

The method 400 may further include, at block 408, shifting, during eachclock period, the first sequence of memory addresses and thecorresponding first sequence of modification commands (e.g., by shiftingthe first sequence of RMW commands) through individual stages of thefirst plurality of stages (e.g., stages 0A, . . . , 3A). The method 400may further include, at block 408, shifting, during each clock period,the second sequence of memory addresses and the corresponding secondsequence of modification commands (e.g., by shifting the second sequenceof RMW commands) through individual stages of the second plurality ofstages (e.g., stages 0B, . . . , 3B), as discussed with respect to FIGS.3 c and 3 d.

The method 400 may further include, at block 412, determining, inresponse to receiving the first memory address and the correspondingfirst modification command (i.e., the first RMW command), that at leasta first stage (e.g., stage 2B) of the first or second (e.g., the second)plurality of stages includes the first memory address and acorresponding second modification command (e.g., Data +2).

The method 400 may further include, at block 416, erasing, in responseto the determining at 412, the first memory address and/or canceling thesecond modification command (e.g., canceling the RMW command stored inthe first stage) while shifting the first memory address and the secondmodification command from the first stage (e.g., stage 2B) to a secondstage (e.g., 3B) or to the RMW module 310A (e.g., in case the firststage is 3B), as discussed with respect to FIGS. 3 c and 3 d.

The method 400 may further include, at block 420, generating, inresponse to the determining at 412, a modified first modificationcommand (e.g., (Data −7)+(Data +2)=(Data −5)) by combining the firstmodification command (e.g., Data −7) and the second modification command(Data +2); and shifting the first memory address (e.g., Addr 2) and themodified first modification command (e.g., Data −5) into a third stage(e.g., stage 0A) of the first plurality of stages.

FIG. 5 is a simplified block diagram of a suitable system 700 in whichcircuits, memory elements and methods described hereinabove may beimplemented. As illustrated, system 700 may include one or moreprocessors or processor cores 702, and system memory 704. For thepurpose of this application, including the claims, the terms “processor”and “processor cores” may be considered synonymous, unless the contextclearly requires otherwise. Additionally, system 700 may include one ormore mass storage devices 706 (such as diskette, hard drive, compactdisc read only memory (CDROM) and so forth), input/output devices 708and communication interfaces 710 (such as network interface cards,modems and so forth). The elements of FIG. 5 may be operatively coupledto each other via system bus 712, which may represent one or more buses.In the case of multiple buses, they may be bridged by one or more busbridges (not illustrated).

Each of these elements performs its conventional functions known in theart. In particular, system memory 704 and mass storage 706 may beemployed to store a working copy and a permanent copy of the programminginstructions implementing all or a portion of earlier describedfunctions, herein collectively denoted as 722. The instructions 722 maybe assembler instructions supported by processor(s) 702 or instructionsthat can be compiled from high level languages, such as C.

The permanent copy of the programming instructions may be placed intopermanent storage 706 in the factory, or in the field, through, forexample, a distribution medium (not shown), such as a compact disc (CD),or through communication interface 710 (from a distribution server (notshown)). That is, one or more distribution media having instructions 722may be employed to distribute the instructions 722 and program variousclient devices. The constitution of these elements 702-712 are generallywell known, and accordingly will not be further described.

In an embodiment, the system 700 may include a CCC (similar to thepreviously discussed CCC 218 of FIGS. 2 a-2 e and/or CCC 318 of FIGS. 3a-3 d) operatively coupled to a memory (e.g., memory 704) though one ormore RMW modules (e.g., RMW module 210 of FIGS. 2 a-2 e and/or RMWmodules 310A and/or 310B of FIGS. 3 a-3 d). For example, a CCC and a RMWmodule 722 may be coupled to the system memory 704. The CCC may operateto cancel and/or modify one or more RMW operations on one or more memoryaddresses of the system memory 704, as previously discussed in moredetail. In an embodiment, the instructions 722 may include one or moreinstructions necessary for operating the CCC and RMW module 718.

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the art andothers, that a wide variety of alternate and/or equivalentimplementations may be substituted for the specific embodimentillustrated and described without departing from the scope of thepresent invention. This present disclosure covers all methods,apparatus, and articles of manufacture fairly falling within the scopeof the appended claims either literally or under the doctrine ofequivalents. For example, although the above discloses example systemsincluding, among other components, software or firmware executed onhardware, it should be noted that such systems are merely illustrativeand should not be considered as limiting. This application is intendedto cover any adaptations or variations of the embodiment discussedherein. Therefore, it is manifested and intended that the invention belimited only by the claims and the equivalents thereof.

1. An apparatus comprising: a command cancellation channel (CCC)including a plurality of stages, the CCC configured to receive asequence of memory read-modify-write (RMW) commands, wherein individualRMW commands include a modification command and a memory address onwhich the corresponding modification command is to be applied; and a RMWmodule operatively coupled to the CCC; wherein the CCC is furtherconfigured to: receive a first RMW command of the sequence of RMWcommands, the first RMW command including a first memory address and afirst modification command; determine that a first stage of theplurality of stages includes a second RMW command that includes thefirst memory address and a corresponding second modification command;and cancel the second RMW command based at least in part on saiddetermining.
 2. The apparatus of claim 1, wherein the CCC is furtherconfigured to modify the first RMW command by combining the secondmodification command to the first modification command, therebygenerating a modified first modification command for the modified firstRMW command.
 3. The apparatus of claim 1, wherein the CCC is furtherconfigured to shift, during each clock period, the sequence of RMWcommands through individual stages of the plurality of stages.
 4. Theapparatus of claim 2, wherein the CCC is further configured to shift themodified first RMW command into a second stage of the plurality ofstages.
 5. The apparatus of claim 1, further comprising a memoryoperatively coupled to the RMW module, wherein the RMW module isconfigured to receive one or more RMW commands from the CCC, and furtherconfigured to perform one or more RMW operations on the memory based atleast in part on the received one or more RMW commands.
 6. The apparatusof claim 5, wherein the number of stages in the plurality of stages isbased at least in part on a maximum number of clock periods required bythe RMW module to perform a RMW operation on the memory.
 7. Theapparatus of claim 1, wherein individual stages of the plurality ofstages comprise a shift register or a buffer.
 8. The apparatus of claim1, wherein individual modification commands of one or more of thesequence of RMW commands comprises addition command.
 9. A method foroperating a command cancellation channel (CCC) comprising a plurality ofstages, the method comprising: receiving, by the CCC, a sequence ofmemory read-modify-write (RMW) commands, wherein individual RMW commandsinclude a modification command and a memory address on which thecorresponding modification command is to be applied, wherein thesequence of RMW commands include at least a first RMW command, andwherein the first RMW command includes a first memory address and acorresponding first modification command; determining, in response toreceiving the first RMW command, that at least a first stage of theplurality of stages includes a second RMW command that includes thefirst memory address and a corresponding second modification command;and canceling the second RMW command based at least in part on saiddetermining.
 10. The method of claim 9, further comprising: modifyingthe first RMW command by combining the first modification command andthe second modification command, thereby generating a modified firstmodification command for the modified first RMW command.
 11. The methodof claim 9, further comprising: shifting, during each clock period, thesequence of RMW commands through individual stages of the plurality ofstages.
 12. The method of claim 9, wherein said cancelling furthercomprises: erasing the first memory address or canceling the secondmodification command while shifting the first memory address and thesecond modification command from the first stage to a second stage ofthe plurality of stages or to a read-modify-write (RMW) moduleoperatively coupled to the CCC.
 13. The method of claim 9, furthercomprising: receiving, by a RMW module operatively coupled to the CCC,one or more RMW commands from the CCC.
 14. The method of claim 13,further comprising: performing, by the RMW module, one or more RMWoperations on a memory operatively coupled to the RMW module, based atleast in part on the received one or more RMW commands.
 15. An apparatuscomprising: a command cancellation channel (CCC) including a firstplurality of stages and a second plurality of stages; and aread-modify-write (RMW) module operatively coupled to the CCC; whereinthe CCC is configured to: receive a first sequence of RMW commands,wherein individual RMW commands include a modification command and amemory address on which the corresponding modification command is to beapplied, and wherein the first sequence of RMW commands include a firstRMW command comprising a first memory address and a corresponding firstmodification command; determine, in response to receiving the first RMWcommand, that at least a first stage of the first or second plurality ofstages includes a second RMW command comprising the first memory addressand a corresponding second modification command; and cancel the secondRMW command.
 16. The apparatus of claim 15, wherein the CCC is furtherconfigured to: modify the first RMW command by combining the firstmodification command and the second modification command, therebygenerating a modified first modification command for the modified firstRMW command.
 17. The apparatus of claim 15, wherein the CCC is furtherconfigured to: receive a second sequence of RMW commands; shift, duringeach clock period, the first sequence of RMW commands through individualstages of the first plurality of stages; and shift, during each clockperiod, the second sequence of RMW commands through individual stages ofthe second plurality of stages.
 18. The apparatus of claim 15, furthercomprising a memory operatively coupled to the RMW module, and whereinthe RMW module is configured to receive one or more RMW commands fromthe CCC, and further configured to perform corresponding one or more RMWoperations on the memory based at least in part on the received one ormore RMW commands.
 19. The apparatus of claim 17, wherein the CCC isfurther configured receive the first sequence of RMW commands from afirst memory pipe, and receive the second sequence of RMW commands froma second memory pipe.
 20. The apparatus of claim 17, wherein the secondsequence of RMW commands includes a third RMW command comprising thefirst memory address and a third modification command, and wherein theCCC receives the first RMW command and the third RMW command during afirst clock period, and wherein the CCC is further configured to:determine, in response to receiving both the first RMW command and thethird RMW command during the first clock period, that both the first andthird RMW commands include the first memory address; cancel the thirdRMW command; and modify the first RMW command by combining the firstmodification command, the second modification command, and the thirdmodification command, thereby generating a modified first modificationcommand for the modified first RMW command.
 21. A method for operating acommand cancellation channel (CCC) comprising a first plurality ofstages and a second plurality of stages, the method comprising:receiving a first sequence of memory addresses and a corresponding firstsequence of modification commands, including at least a first memoryaddress and a corresponding first modification command; receiving asecond sequence of memory addresses and a corresponding second sequenceof modification commands; shifting, during each clock period, the firstsequence of memory addresses and the corresponding first sequence ofmodification commands through individual stages of the first pluralityof stages; shifting, during each clock period, the second sequence ofmemory addresses and the corresponding second sequence of modificationcommands through individual stages of the second plurality of stages;determining, in response to receiving the first memory address and thecorresponding first modification command, that at least a first stage ofthe first or second plurality of stages includes the first memoryaddress and a corresponding second modification command; and erasing thefirst memory address or canceling the second modification command whileshifting the first memory address and the second modification commandfrom the first stage to a second stage of the first or second pluralityof stages or to a read-modify-write (RMW) module operatively coupled tothe CCC.
 22. The apparatus of claim 21, further comprising: generating,in response to said determining, a modified first modification commandby combining the first modification command and the second modificationcommand; and shifting the first memory address and the modified firstmodification command into a third stage of the first plurality ofstages.
 23. The method of claim 21, further comprising: receiving, bythe RMW module, one or more memory addresses and corresponding one ormore modification commands from the CCC; and performing, by the RMWmodule, one or more RMW operations on a memory operatively coupled tothe RMW module based at least in part on the received memory addressesand modification commands.
 24. The method of claim 23, wherein the firstsequence of memory addresses and the corresponding first sequence ofmodification commands are received from a first memory pipe, and whereinthe second sequence of memory addresses and the corresponding secondsequence of modification commands are received from a second memorypipe.
 25. The method of claim 23, wherein the second sequence of memoryaddresses and the second sequence of modification commands includes asecond memory address and a corresponding third modification command,respectively, wherein the CCC receives the first memory address from thefirst sequence of memory addresses and the second memory address fromthe second sequence of memory addresses during a first clock period, andwherein the first memory address and the second memory address refer tothe same memory location, the method further comprising: seconddetermining, in response to receiving both the first memory address andthe second memory address during the first clock period, that the firstmemory address and the second memory address refer to the same memorylocation; and erasing the second memory address or canceling thecorresponding third modification command while shifting the secondmemory address and the third modification command into a third stage ofthe second plurality of stages.
 26. The method of claim 25, furthercomprising: generating a modified first modification command bycombining the first, second and third modification commands; andshifting the first memory address and the modified first modificationcommand into a third stage of the first plurality of stages.